{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9633920","patent":{"patent_number":"US-9633920","title":"Low damage passivation layer for III-V based devices","assignee":null,"inventors":[],"filing_date":"2015-02-12T00:00:00.000Z","publication_date":"2017-04-25T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L"],"num_claims":17,"abstract":"The present disclosure relates to a structure and method of forming a low damage passivation layer for III-V HEMT devices. In some embodiments, the structure has a bulk buffer layer disposed over a substrate and a device layer of III-V material disposed over the bulk buffer layer. A source region, a drain region and a gate region are disposed above the device layer. The gate region comprises a gate electrode overlying a gate separation layer. A bulk passivation layer is arranged over the device layer, and an interfacial layer of III-V material is disposed between the bulk passivation layer and the device layer in such a way that the source region, the drain region and the gate region extend through the bulk passivation layer and the interfacial layer, to abut the device layer."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Low damage passivation layer for III-V based devices","description":"The present disclosure relates to a structure and method of forming a low damage passivation layer for III-V HEMT devices. In some embodiments, the structure has a bulk buffer layer disposed over a su","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9633920","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9633920","citation_suggestion":"Patentable. \"Low damage passivation layer for III-V based devices\" (US-9633920). https://patentable.app/patents/US-9633920","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9633920","json":"https://patentable.app/api/llm-context/US-9633920","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T10:17:52.389Z"}