{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9633986","patent":{"patent_number":"US-9633986","title":"Technique for fabrication of microelectronic capacitors and resistors","assignee":null,"inventors":[],"filing_date":"2016-06-07T00:00:00.000Z","publication_date":"2017-04-25T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":20,"abstract":"A sequence of semiconductor processing steps permits formation of both vertical and horizontal nanometer-scale serpentine resistors and parallel plate capacitors within a common structure. The method takes advantage of a CMP process non-uniformity in which the CMP polish rate of an insulating material varies according to a certain underlying topography. By establishing such topography underneath a layer of the insulating material, different film thicknesses of the insulator can be created in different areas by leveraging differential polish rates, thereby avoiding the use of a lithography mask. In one embodiment, a plurality of resistors and capacitors can be formed as a compact integrated structure within a common dielectric block, using a process that requires only two mask layers. The resistors and capacitors thus formed as a set of integrated circuit elements are suitable for use as microelectronic fuses and antifuses, respectively, to protect underlying microelectronic circuits."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Technique for fabrication of microelectronic capacitors and resistors","description":"A sequence of semiconductor processing steps permits formation of both vertical and horizontal nanometer-scale serpentine resistors and parallel plate capacitors within a common structure. The method ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9633986","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9633986","citation_suggestion":"Patentable. \"Technique for fabrication of microelectronic capacitors and resistors\" (US-9633986). https://patentable.app/patents/US-9633986","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9633986","json":"https://patentable.app/api/llm-context/US-9633986","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T10:18:20.267Z"}