{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9634017","patent":{"patent_number":"US-9634017","title":"Semiconductor structure including a nonvolatile memory cell and method for the formation thereof","assignee":null,"inventors":[],"filing_date":"2015-12-04T00:00:00.000Z","publication_date":"2017-04-25T00:00:00.000Z","cpc_codes":["G11C","G11C","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":15,"abstract":"A semiconductor structure includes a nonvolatile memory cell including a first nonvolatile bit storage element and a second nonvolatile bit storage element which have a common source region provided in a semiconductor material and a common control gate structure. Each nonvolatile bit storage element includes a drain region, a channel region, a select gate structure, a floating gate structure and an erase gate structure. The channel region has a select gate side portion and a floating gate side portion. The select gate structure is provided at the select gate side portion of the channel region and the floating gate structure is provided at the floating gate side portion of the channel region. The erase gate structure is provided above the select gate structure and adjacent the floating gate structure. The control gate structure extends above the floating gate structures of the first and second nonvolatile bit storage elements."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor structure including a nonvolatile memory cell and method for the formation thereof","description":"A semiconductor structure includes a nonvolatile memory cell including a first nonvolatile bit storage element and a second nonvolatile bit storage element which have a common source region provided i","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9634017","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9634017","citation_suggestion":"Patentable. \"Semiconductor structure including a nonvolatile memory cell and method for the formation thereof\" (US-9634017). https://patentable.app/patents/US-9634017","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9634017","json":"https://patentable.app/api/llm-context/US-9634017","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T09:52:11.508Z"}