{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9634031","patent":{"patent_number":"US-9634031","title":"Semiconductor device comprising oxide semiconductor","assignee":null,"inventors":[],"filing_date":"2015-06-17T00:00:00.000Z","publication_date":"2017-04-25T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L"],"num_claims":15,"abstract":"To suppress change in electric characteristics and improve reliability of a semiconductor device including a transistor formed using an oxide semiconductor. A semiconductor device includes a transistor including a gate electrode, a first insulating film, an oxide semiconductor film, a second insulating film, and a pair of electrodes. The gate electrode and the oxide semiconductor film overlap with each other. The oxide semiconductor film is located between the first insulating film and the second insulating film and in contact with the pair of electrodes. The first insulating film is located between the gate electrode and the oxide semiconductor film. An etching rate of a region of at least one of the first insulating film and the second insulating film is higher than 8 nm/min when etching is performed using a hydrofluoric acid."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor device comprising oxide semiconductor","description":"To suppress change in electric characteristics and improve reliability of a semiconductor device including a transistor formed using an oxide semiconductor. A semiconductor device includes a transisto","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9634031","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9634031","citation_suggestion":"Patentable. \"Semiconductor device comprising oxide semiconductor\" (US-9634031). https://patentable.app/patents/US-9634031","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9634031","json":"https://patentable.app/api/llm-context/US-9634031","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T05:19:17.823Z"}