{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9634084","patent":{"patent_number":"US-9634084","title":"Conformal buffer layer in source and drain regions of fin-type transistors","assignee":null,"inventors":[],"filing_date":"2016-02-10T00:00:00.000Z","publication_date":"2017-04-25T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":19,"abstract":"Fin-type transistor fabrication methods and structures are provided which include, for example, providing a gate structure extending at least partially over a fin extended above a substrate structure, the gate structure being disposed adjacent to at least one region of the fin; disposing a protective film conformally over the gate structure and over the at least one region; modifying the protective film over the at least one region of the fin to form a conformal buffer layer, wherein the modifying selectively alters a crystalline structure of the protective film over the at least one region which thereby becomes the conformal buffer layer, without altering the crystalline structure of the protective film disposed over the gate structure; and removing the un-altered protective film over the gate structure, leaving the conformal buffer layer over the at least one region to form a source region and a drain region of the fin-type transistor."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Conformal buffer layer in source and drain regions of fin-type transistors","description":"Fin-type transistor fabrication methods and structures are provided which include, for example, providing a gate structure extending at least partially over a fin extended above a substrate structure,","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9634084","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9634084","citation_suggestion":"Patentable. \"Conformal buffer layer in source and drain regions of fin-type transistors\" (US-9634084). https://patentable.app/patents/US-9634084","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9634084","json":"https://patentable.app/api/llm-context/US-9634084","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T15:32:51.955Z"}