{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9634087","patent":{"patent_number":"US-9634087","title":"FinFET and fabrication method thereof","assignee":null,"inventors":[],"filing_date":"2016-08-17T00:00:00.000Z","publication_date":"2017-04-25T00:00:00.000Z","cpc_codes":["H01L"],"num_claims":16,"abstract":"A method is provided for fabricating a FinFET. The method includes providing a semiconductor substrate; forming a hard mask layer on the semiconductor substrate, wherein a position of the hard mask layer may corresponds to a position of subsequently formed fin; forming a doping region in the semiconductor substrate by using the hard mask layer as a mask to perform an anti-punch-through ion implantation process; forming an anti-punch-through region by performing an annealing process onto the doping region, such that impurity ions in the doping region diffuse into the semiconductor substrate under the hard mask layer; and forming a trench by using the hard mask layer as a mask to etch the semiconductor substrate and the doping region, wherein the semiconductor substrates between the adjacent trenches constitutes a fin."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"FinFET and fabrication method thereof","description":"A method is provided for fabricating a FinFET. The method includes providing a semiconductor substrate; forming a hard mask layer on the semiconductor substrate, wherein a position of the hard mask la","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9634087","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9634087","citation_suggestion":"Patentable. \"FinFET and fabrication method thereof\" (US-9634087). https://patentable.app/patents/US-9634087","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9634087","json":"https://patentable.app/api/llm-context/US-9634087","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T05:59:26.577Z"}