{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9634090","patent":{"patent_number":"US-9634090","title":"Preventing buried oxide gouging during planar and FinFET processing on SOI","assignee":null,"inventors":[],"filing_date":"2016-04-29T00:00:00.000Z","publication_date":"2017-04-25T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":5,"abstract":"A method for preventing damage to the insulator layer of a semiconductor device during creation of fin field effect transistor (FinFET) includes obtaining a material stack having an active semiconductor layer, an insulator layer, and an etch stop layer between the active semiconductor layer and the insulator layer; forming a fin-array from the active semiconductor layer; patterning the fin-array; and fabricating a FinFET device from the patterned fin-array; where the etch stop layer is resistant to processes the etch stop layer is exposed to during the forming, patterning, and fabricating operations, such that the etch stop layer and the insulator layer are not damaged during the forming, patterning, and fabricating operations."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Preventing buried oxide gouging during planar and FinFET processing on SOI","description":"A method for preventing damage to the insulator layer of a semiconductor device during creation of fin field effect transistor (FinFET) includes obtaining a material stack having an active semiconduct","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9634090","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9634090","citation_suggestion":"Patentable. \"Preventing buried oxide gouging during planar and FinFET processing on SOI\" (US-9634090). https://patentable.app/patents/US-9634090","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9634090","json":"https://patentable.app/api/llm-context/US-9634090","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T07:17:44.780Z"}