{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9634104","patent":{"patent_number":"US-9634104","title":"FinFET and method of fabricating the same","assignee":null,"inventors":[],"filing_date":"2015-05-13T00:00:00.000Z","publication_date":"2017-04-25T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L"],"num_claims":19,"abstract":"A method of fabricating a fin field effect transistor (FinFET) includes forming a first fin and a second fin extending upward from a substrate major surface to a first height, forming an insulation layer comprising a top surface extending upward from the substrate major surface to a second height less than the first height, selectively forming a bulbous epitaxial layer covering a portion of each fin, annealing the substrate to convert at least a portion of the bulbous epitaxial layer to silicide and depositing a metal layer at least in the cavity. The first fin and the second fin are adjacent. A portion of the first fin and a portion of the second fin extend beyond the top surface of the insulation layer. The bulbous epitaxial layer defines an hourglass shaped cavity between adjacent fins."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"FinFET and method of fabricating the same","description":"A method of fabricating a fin field effect transistor (FinFET) includes forming a first fin and a second fin extending upward from a substrate major surface to a first height, forming an insulation la","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9634104","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9634104","citation_suggestion":"Patentable. \"FinFET and method of fabricating the same\" (US-9634104). https://patentable.app/patents/US-9634104","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9634104","json":"https://patentable.app/api/llm-context/US-9634104","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T07:28:15.248Z"}