{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9634107","patent":{"patent_number":"US-9634107","title":"Low temperature ohmic contacts for III-N power devices","assignee":null,"inventors":[],"filing_date":"2014-05-22T00:00:00.000Z","publication_date":"2017-04-25T00:00:00.000Z","cpc_codes":["H01L"],"num_claims":19,"abstract":"The disclosure relates to a method for manufacturing an Au-free ohmic contact for an III-nitride (III-N) device on a semiconductor substrate and to a III-N device obtainable therefrom. The III-N device includes a buffer layer, a channel layer, a barrier layer, and a passivation layer. A 2DEG layer is formed at an interface between the channel layer and the barrier layer. The method includes forming a recess in the passivation layer and in the barrier layer up to the 2DEG layer, and forming an Au-free metal stack in the recess. The metal stack comprises a Ti/Al bi-layer, with a Ti layer overlying and in contact with a bottom of the recess, and a Al layer overlying and in contact with the Ti layer. A thickness ratio of the Ti layer to the Al layer is between 0.01 to 0.1. After forming the metal stack, a rapid thermal anneal is performed. Optionally, prior to forming the Ti/Al bi-layer, a silicon layer may be formed in contact with the recess."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Low temperature ohmic contacts for III-N power devices","description":"The disclosure relates to a method for manufacturing an Au-free ohmic contact for an III-nitride (III-N) device on a semiconductor substrate and to a III-N device obtainable therefrom. The III-N devic","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9634107","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9634107","citation_suggestion":"Patentable. \"Low temperature ohmic contacts for III-N power devices\" (US-9634107). https://patentable.app/patents/US-9634107","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9634107","json":"https://patentable.app/api/llm-context/US-9634107","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T11:40:52.936Z"}