{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9634113","patent":{"patent_number":"US-9634113","title":"Fully silicided linerless middle-of-line (MOL) contact","assignee":null,"inventors":[],"filing_date":"2015-12-14T00:00:00.000Z","publication_date":"2017-04-25T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":6,"abstract":"A method of making a semiconductor device includes forming a source/drain region on a substrate; disposing a gate stack on the substrate and adjacent to the source/drain region, the gate stack including a gate spacer along a sidewall of the gate stack; disposing an inter-level dielectric (ILD) layer on the source/drain region and the gate stack; removing a portion of the ILD layer on the source/drain region to form a source/drain contact pattern; filling the source/drain contact pattern with a layer of silicon material, the layer of silicon material being in contact with the source/drain region and in contact with the gate spacer; depositing a metallic layer over the first layer of silicon material; and performing a silicidation process to form a source/drain contact including a silicide."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Fully silicided linerless middle-of-line (MOL) contact","description":"A method of making a semiconductor device includes forming a source/drain region on a substrate; disposing a gate stack on the substrate and adjacent to the source/drain region, the gate stack includi","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9634113","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9634113","citation_suggestion":"Patentable. \"Fully silicided linerless middle-of-line (MOL) contact\" (US-9634113). https://patentable.app/patents/US-9634113","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9634113","json":"https://patentable.app/api/llm-context/US-9634113","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T11:18:49.020Z"}