{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9634114","patent":{"patent_number":"US-9634114","title":"Tunnel field-effect transistor, method for manufacturing same, and switch element","assignee":null,"inventors":[],"filing_date":"2014-08-12T00:00:00.000Z","publication_date":"2017-04-25T00:00:00.000Z","cpc_codes":["B82Y","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","B82Y"],"num_claims":12,"abstract":"A tunnel field-effect transistor (TFET) is configured by disposing a III-V compound semiconductor nano wire on a (111) plane of a IV semiconductor substrate exhibiting p-type conductivity, and arbitrarily disposing electrodes of a source, drain and gate. Alternatively, the tunnel field-effect transistor is configured by disposing a III-V compound semiconductor nano wire on a (111) plane of a IV semiconductor substrate exhibiting n-type conductivity, and arbitrarily disposing electrodes of a source, drain and gate. The nano wire is configured from a first region and a second region. For instance, the first region is intermittently doped with a p-type dopant, and the second region is doped with an n-type dopant."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Tunnel field-effect transistor, method for manufacturing same, and switch element","description":"A tunnel field-effect transistor (TFET) is configured by disposing a III-V compound semiconductor nano wire on a (111) plane of a IV semiconductor substrate exhibiting p-type conductivity, and arbitra","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9634114","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9634114","citation_suggestion":"Patentable. \"Tunnel field-effect transistor, method for manufacturing same, and switch element\" (US-9634114). https://patentable.app/patents/US-9634114","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9634114","json":"https://patentable.app/api/llm-context/US-9634114","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T05:19:12.991Z"}