{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9634115","patent":{"patent_number":"US-9634115","title":"Methods of forming a protection layer on a semiconductor device and the resulting device","assignee":null,"inventors":[],"filing_date":"2014-06-11T00:00:00.000Z","publication_date":"2017-04-25T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L"],"num_claims":17,"abstract":"One illustrative method disclosed herein includes, among other things, forming a first high-k protection layer on the source/drain regions and adjacent the sidewall spacers of a transistor device, removing a sacrificial gate structure positioned between the sidewall spacers so as to thereby define a replacement gate cavity, forming a replacement gate structure in the replacement gate cavity, forming a second high-k protection layer above an upper surface of the spacers, above an upper surface of the replacement gate structure and above the first high-k protection layer, and removing portions of the second high-k protection layer positioned above the first high-k protection layer."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Methods of forming a protection layer on a semiconductor device and the resulting device","description":"One illustrative method disclosed herein includes, among other things, forming a first high-k protection layer on the source/drain regions and adjacent the sidewall spacers of a transistor device, rem","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9634115","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9634115","citation_suggestion":"Patentable. \"Methods of forming a protection layer on a semiconductor device and the resulting device\" (US-9634115). https://patentable.app/patents/US-9634115","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9634115","json":"https://patentable.app/api/llm-context/US-9634115","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T07:16:33.296Z"}