{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9634118","patent":{"patent_number":"US-9634118","title":"Methods of forming semiconductor devices","assignee":null,"inventors":[],"filing_date":"2016-05-25T00:00:00.000Z","publication_date":"2017-04-25T00:00:00.000Z","cpc_codes":["H01L","H01L"],"num_claims":20,"abstract":"Methods of forming semiconductor devices are provided. A method of forming a semiconductor device includes forming first and second dielectric layers in first and second trenches. The method includes forming first and second conductive layers on the first and second dielectric layers, respectively. The method includes forming first and second protective layers on the first and second conductive layers, respectively. The method includes performing an annealing process while the first and second protective layers are on the first and second conductive layers. The method includes removing the first and second protective layers. The method includes removing the first conductive layer, after performing the annealing process. Moreover, the method includes forming first and second gate metals in the first and second trenches, respectively, after removing the first conductive layer."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Methods of forming semiconductor devices","description":"Methods of forming semiconductor devices are provided. A method of forming a semiconductor device includes forming first and second dielectric layers in first and second trenches. The method includes ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9634118","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9634118","citation_suggestion":"Patentable. \"Methods of forming semiconductor devices\" (US-9634118). https://patentable.app/patents/US-9634118","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9634118","json":"https://patentable.app/api/llm-context/US-9634118","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T06:41:14.868Z"}