{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9634119","patent":{"patent_number":"US-9634119","title":"Semiconductor devices utilizing partially doped stressor film portions","assignee":null,"inventors":[],"filing_date":"2015-06-19T00:00:00.000Z","publication_date":"2017-04-25T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L"],"num_claims":20,"abstract":"A method includes providing a gate structure over a semiconductor substrate and forming a source/drain region associated with the gate structure by etching an opening in the semiconductor substrate, performing a first epitaxial growth process while an entirety of a sidewall of the opening is exposed to grow a first epitaxy material in the opening. The first epitaxial growth process is free of a first dopant impurity. A second epitaxial growth process is performed after first epitaxial growth process to grow a second epitaxy material on the first epitaxy material. The second epitaxy material has the first dopant impurity at a first concentration. Further, a third epitaxial growth process is performed after the second epitaxial growth process that includes introducing the first dopant impurity at a second concentration, the second concentration greater than the first concentration."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor devices utilizing partially doped stressor film portions","description":"A method includes providing a gate structure over a semiconductor substrate and forming a source/drain region associated with the gate structure by etching an opening in the semiconductor substrate, p","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9634119","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9634119","citation_suggestion":"Patentable. \"Semiconductor devices utilizing partially doped stressor film portions\" (US-9634119). https://patentable.app/patents/US-9634119","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9634119","json":"https://patentable.app/api/llm-context/US-9634119","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T07:20:02.810Z"}