{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9634122","patent":{"patent_number":"US-9634122","title":"Device boost by quasi-FinFET","assignee":null,"inventors":[],"filing_date":"2014-03-12T00:00:00.000Z","publication_date":"2017-04-25T00:00:00.000Z","cpc_codes":["H01L","H01L"],"num_claims":20,"abstract":"Some embodiments relate to an integrated circuit (IC) including one or more field-effect transistor devices. A field effect transistor device includes source/drain regions disposed in an active region of a semiconductor substrate and separated from one another along a first direction by a channel region. A shallow trench isolation (STI) region, which has an upper STI surface, laterally surrounds the active region. The STI region includes trench regions, which have lower trench surfaces below the upper STI surface and which extend from opposite sides of the channel region in a second direction which intersects the first direction. A metal gate electrode extends in the second direction and has lower portions which are disposed in the trench regions and which are separated from one another by the channel region. The metal gate electrode has an upper portion bridging over the channel region to couple the lower portions to one another."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Device boost by quasi-FinFET","description":"Some embodiments relate to an integrated circuit (IC) including one or more field-effect transistor devices. A field effect transistor device includes source/drain regions disposed in an active region","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9634122","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9634122","citation_suggestion":"Patentable. \"Device boost by quasi-FinFET\" (US-9634122). https://patentable.app/patents/US-9634122","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9634122","json":"https://patentable.app/api/llm-context/US-9634122","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T07:48:35.879Z"}