{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9634123","patent":{"patent_number":"US-9634123","title":"FinFET device including a dielectrically isolated silicon alloy fin","assignee":null,"inventors":[],"filing_date":"2015-04-02T00:00:00.000Z","publication_date":"2017-04-25T00:00:00.000Z","cpc_codes":["H01L"],"num_claims":20,"abstract":"A method includes forming a fin on a semiconductor substrate. An isolation structure is formed adjacent the fin. A silicon alloy material is formed on a portion of the fin extending above the isolation structure. A thermal process is performed to define a silicon alloy fin portion from the silicon alloy material and the fin and to define a first insulating layer separating the fin from the substrate."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"FinFET device including a dielectrically isolated silicon alloy fin","description":"A method includes forming a fin on a semiconductor substrate. An isolation structure is formed adjacent the fin. A silicon alloy material is formed on a portion of the fin extending above the isolatio","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9634123","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9634123","citation_suggestion":"Patentable. \"FinFET device including a dielectrically isolated silicon alloy fin\" (US-9634123). https://patentable.app/patents/US-9634123","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9634123","json":"https://patentable.app/api/llm-context/US-9634123","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T12:31:40.574Z"}