{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9634133","patent":{"patent_number":"US-9634133","title":"Method of forming fin structure on patterned substrate that includes depositing quantum well layer over fin structure","assignee":null,"inventors":[],"filing_date":"2016-03-11T00:00:00.000Z","publication_date":"2017-04-25T00:00:00.000Z","cpc_codes":["H01L"],"num_claims":25,"abstract":"Embodiments provide a quantum well device and the method for forming this device with high mobility and higher punch through voltages. For forming the quantum well device, a buffer layer can be formed on a patterned substrate of a quantum well device. A fin-like structure can be formed through an etching process performed to the buffer layer. A quantum well layer, a barrier layer, a cover layer and a dielectric layer can be successively deposited on the buffer layer and surface of the fin-like structure. A metal layer can then be formed on the surface of the said dielectric layer. Metal gate electrode and gate dielectric layer can be formed on the metal layer and dielectric layer. The cover layer, the barrier layer and the quantum well can then be etched to form recessed source and drain regions. Such a quantum well device can have better performance and reliability."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method of forming fin structure on patterned substrate that includes depositing quantum well layer over fin structure","description":"Embodiments provide a quantum well device and the method for forming this device with high mobility and higher punch through voltages. For forming the quantum well device, a buffer layer can be formed","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9634133","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9634133","citation_suggestion":"Patentable. \"Method of forming fin structure on patterned substrate that includes depositing quantum well layer over fin structure\" (US-9634133). https://patentable.app/patents/US-9634133","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9634133","json":"https://patentable.app/api/llm-context/US-9634133","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T18:29:36.429Z"}