{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9634135","patent":{"patent_number":"US-9634135","title":"Power field effect transistor","assignee":null,"inventors":[],"filing_date":"2013-02-27T00:00:00.000Z","publication_date":"2017-04-25T00:00:00.000Z","cpc_codes":["H01L"],"num_claims":23,"abstract":"A field-effect transistors (FET) cell structure has a substrate, an epitaxial layer of a first conductivity type on the substrate, first and second base regions of the second conductivity type arranged within the epitaxial layer or well and spaced apart, and first and second source regions of a first conductivity type arranged within the first and second base region, respectively. Furthermore, a gate structure insulated from the epitaxial layer by an insulation layer is provided and arranged above the region between the first and second base regions and covering at least partly the first and second base region, and a drain contact reaches from a top of the device through the epitaxial layer to couple a top contact or metal layer with the substrate."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Power field effect transistor","description":"A field-effect transistors (FET) cell structure has a substrate, an epitaxial layer of a first conductivity type on the substrate, first and second base regions of the second conductivity type arrange","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9634135","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9634135","citation_suggestion":"Patentable. \"Power field effect transistor\" (US-9634135). https://patentable.app/patents/US-9634135","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9634135","json":"https://patentable.app/api/llm-context/US-9634135","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T09:31:55.628Z"}