{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9634139","patent":{"patent_number":"US-9634139","title":"Dual-well metal oxide semiconductor (MOS) device and manufacturing method thereof","assignee":null,"inventors":[],"filing_date":"2016-11-08T00:00:00.000Z","publication_date":"2017-04-25T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L"],"num_claims":10,"abstract":"A dual-well metal oxide semiconductor (MOS) device includes: a semiconductor substrate, an active layer, a first conductive type well, a first conductive type body region, a second conductive type well, a gate, a second conductive type lightly doped diffusion (LDD) region, a second conductive type source, a second conductive type connection region, and a second conductive type drain. The second conductive type well is connected to the first conductive type well in a lateral direction, and a PN junction is formed therebetween right below the gate. The second conductive type connection region is formed right below a spacer of the gate, and is connected to the second conductive type source in a lateral direction to avoid OFF-channel. The second conductive type connection region is formed by a tilt-angle ion implantation process step through the spacer."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Dual-well metal oxide semiconductor (MOS) device and manufacturing method thereof","description":"A dual-well metal oxide semiconductor (MOS) device includes: a semiconductor substrate, an active layer, a first conductive type well, a first conductive type body region, a second conductive type wel","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9634139","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9634139","citation_suggestion":"Patentable. \"Dual-well metal oxide semiconductor (MOS) device and manufacturing method thereof\" (US-9634139). https://patentable.app/patents/US-9634139","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9634139","json":"https://patentable.app/api/llm-context/US-9634139","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T06:43:12.194Z"}