{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9634140","patent":{"patent_number":"US-9634140","title":"Fabricating metal source-drain stressor in a MOS device channel","assignee":null,"inventors":[],"filing_date":"2015-11-05T00:00:00.000Z","publication_date":"2017-04-25T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":34,"abstract":"Exemplary embodiments provide methods and systems for fabricating a metal source-drain stressor in a MOS device channel having improved tensile stress. Aspects of exemplary embodiment include forming a recess in source and drain areas; forming a metal contact layer on surfaces of the recess that achieves low contact resistivity; forming a metallic diffusion barrier over the metal contact layer; forming a layer M as an intimate mixture of materials A and B that substantially fills the recess; capping the layer M with a capping layer so that layer M is fully encapsulated and the capping layer prevents diffusion of A and B; and forming a compound AxBy within the layer M via a thermal reaction resulting in a reacted layer M comprising the metal source-drain stressor."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Fabricating metal source-drain stressor in a MOS device channel","description":"Exemplary embodiments provide methods and systems for fabricating a metal source-drain stressor in a MOS device channel having improved tensile stress. Aspects of exemplary embodiment include forming ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9634140","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9634140","citation_suggestion":"Patentable. \"Fabricating metal source-drain stressor in a MOS device channel\" (US-9634140). https://patentable.app/patents/US-9634140","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9634140","json":"https://patentable.app/api/llm-context/US-9634140","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T15:37:50.791Z"}