{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9634142","patent":{"patent_number":"US-9634142","title":"Method for improving boron diffusion in a germanium-rich fin through germanium concentration reduction in fin S/D regions by thermal mixing","assignee":null,"inventors":[],"filing_date":"2016-03-22T00:00:00.000Z","publication_date":"2017-04-25T00:00:00.000Z","cpc_codes":["H01L"],"num_claims":14,"abstract":"A method may include forming a germanium-including fin on a substrate, and forming a dummy gate extending over the germanium-including fin, creating a channel under the gate and a source/drain region of the germanium-including fin extending from under the dummy gate on each side of the dummy gate. An in-situ p-type doped silicon germanium layer may be grown over the source/drain region, the germanium-including fin having a higher concentration of germanium than the in-situ p-type doped silicon germanium layer. An anneal thermally mixes the germanium of the in-situ p-type doped silicon germanium layer and the germanium of the germanium-including fin in the source/drain region of the germanium-including fin and diffuses the p-type dopant of the in-situ p-type doped silicon germanium layer into the channel of the germanium-including fin, forming a source/drain extension. A portion of the channel has a higher germanium concentration than the source/drain region."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method for improving boron diffusion in a germanium-rich fin through germanium concentration reduction in fin S/D regions by thermal mixing","description":"A method may include forming a germanium-including fin on a substrate, and forming a dummy gate extending over the germanium-including fin, creating a channel under the gate and a source/drain region ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9634142","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9634142","citation_suggestion":"Patentable. \"Method for improving boron diffusion in a germanium-rich fin through germanium concentration reduction in fin S/D regions by thermal mixing\" (US-9634142). https://patentable.app/patents/US-9634142","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9634142","json":"https://patentable.app/api/llm-context/US-9634142","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T09:16:38.958Z"}