{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9634151","patent":{"patent_number":"US-9634151","title":"High voltage junctionless field effect device and its method of fabrication","assignee":null,"inventors":[],"filing_date":"2016-02-02T00:00:00.000Z","publication_date":"2017-04-25T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":15,"abstract":"A structure and a method of fabrication are disclosed of a high voltage junctionless field effect device. A channel layer and a barrier layer are formed sequentially underneath the gate structure. The width of energy band gap of the barrier layer is wider than that of the channel layer. Thus the two dimensional electron gas (2-DEG) generated in the interface between the channel layer and the barrier layer of this junctionless field effect device has higher electron mobility. The structure of the device of this disclosure has a higher breakdown voltage which is advantageous for a high voltage junctionless field device. The structure offers advantages in device performance and reliability."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"High voltage junctionless field effect device and its method of fabrication","description":"A structure and a method of fabrication are disclosed of a high voltage junctionless field effect device. A channel layer and a barrier layer are formed sequentially underneath the gate structure. The","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9634151","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9634151","citation_suggestion":"Patentable. \"High voltage junctionless field effect device and its method of fabrication\" (US-9634151). https://patentable.app/patents/US-9634151","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9634151","json":"https://patentable.app/api/llm-context/US-9634151","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T13:35:10.297Z"}