{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9634182","patent":{"patent_number":"US-9634182","title":"Semiconductor structures having active regions including indium gallium nitride, methods of forming such semiconductor structures, and related light emitting devices","assignee":null,"inventors":[],"filing_date":"2016-01-08T00:00:00.000Z","publication_date":"2017-04-25T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L"],"num_claims":23,"abstract":"Semiconductor structures include an active region between a plurality of layers of InGaN. The active region may be at least substantially comprised by InGaN. The plurality of layers of InGaN include at least one well layer comprising InwGa1-wN, and at least one barrier layer comprising InbGa1-bN proximate the at least one well layer. In some embodiments, the value of w in the InwGa1-wN of the well layer may be greater than or equal to about 0.10 and less than or equal to about 0.40 in some embodiments, and the value of b in the InbGa1-bN of the at least one barrier layer may be greater than or equal to about 0.01 and less than or equal to about 0.10. Methods of forming semiconductor structures include growing such layers of InGaN to form an active region of a light emitting device, such as an LED. Luminary devices include such LEDs."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor structures having active regions including indium gallium nitride, methods of forming such semiconductor structures, and related light emitting devices","description":"Semiconductor structures include an active region between a plurality of layers of InGaN. The active region may be at least substantially comprised by InGaN. The plurality of layers of InGaN include a","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9634182","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9634182","citation_suggestion":"Patentable. \"Semiconductor structures having active regions including indium gallium nitride, methods of forming such semiconductor structures, and related light emitting devices\" (US-9634182). https://patentable.app/patents/US-9634182","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9634182","json":"https://patentable.app/api/llm-context/US-9634182","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T11:17:39.301Z"}