{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9639419","patent":{"patent_number":"US-9639419","title":"Read voltage level estimating method, memory storage device and memory control circuit unit","assignee":null,"inventors":[],"filing_date":"2015-06-22T00:00:00.000Z","publication_date":"2017-05-02T00:00:00.000Z","cpc_codes":["G06F","G11C","G11C","G11C","G11C"],"num_claims":36,"abstract":"A read voltage level estimating method, a memory storage device and a memory control circuit unit are provided. The method includes: reading a first region of a rewritable non-volatile memory module according to a first read voltage level to obtain a first encoding unit which belongs to a block code; performing a first decoding procedure on the first encoding unit and recording first decoding information; reading the first region according to a second read voltage level to obtain a second encoding unit which belongs to the block code; performing a second decoding procedure on the second encoding unit and recording second decoding information; and estimating and obtaining a third read voltage level according to the first decoding information and the second decoding information. Accordingly, a management ability of the rewritable non-volatile memory module adopting the block code may be improved."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Read voltage level estimating method, memory storage device and memory control circuit unit","description":"A read voltage level estimating method, a memory storage device and a memory control circuit unit are provided. The method includes: reading a first region of a rewritable non-volatile memory module a","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9639419","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9639419","citation_suggestion":"Patentable. \"Read voltage level estimating method, memory storage device and memory control circuit unit\" (US-9639419). https://patentable.app/patents/US-9639419","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9639419","json":"https://patentable.app/api/llm-context/US-9639419","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T10:19:33.791Z"}