{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9640262","patent":{"patent_number":"US-9640262","title":"Highly scalable single-poly non-volatile memory cell","assignee":null,"inventors":[],"filing_date":"2015-05-22T00:00:00.000Z","publication_date":"2017-05-02T00:00:00.000Z","cpc_codes":["G11C","G11C","G11C","G11C","G11C","G11C","G11C","G11C","G11C","H01L","H01L","H01L"],"num_claims":12,"abstract":"A nonvolatile memory cell includes a semiconductor substrate, a first OD region, a second OD region, an isolation region separating the first OD region from the second OD region, a PMOS select transistor disposed on the first OD region, and a PMOS floating gate transistor serially connected to the select transistor and disposed on the first OD region. The PMOS floating gate transistor includes a floating gate overlying the first OD region. A memory P well is disposed in the semiconductor substrate. A memory N well is disposed in the memory P well. The memory P well overlaps with the first OD region and the second OD region. The memory P well has a junction depth that is deeper than a trench depth of the isolation region. The memory N well has a junction depth that is shallower than the trench depth of the isolation region."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Highly scalable single-poly non-volatile memory cell","description":"A nonvolatile memory cell includes a semiconductor substrate, a first OD region, a second OD region, an isolation region separating the first OD region from the second OD region, a PMOS select transis","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9640262","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9640262","citation_suggestion":"Patentable. \"Highly scalable single-poly non-volatile memory cell\" (US-9640262). https://patentable.app/patents/US-9640262","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9640262","json":"https://patentable.app/api/llm-context/US-9640262","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T03:51:26.066Z"}