{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9640394","patent":{"patent_number":"US-9640394","title":"Method for fabricating a semiconductor structure","assignee":null,"inventors":[],"filing_date":"2015-08-26T00:00:00.000Z","publication_date":"2017-05-02T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":17,"abstract":"Method for fabricating a semiconductor structure. The method includes: providing a crystalline silicon substrate; defining an opening in a dielectric layer on the crystalline silicon substrate, the opening having sidewalls and a bottom wherein the bottom corresponds to a surface of the crystalline silicon substrate; providing a confinement structure above the dielectric layer, thereby forming a confinement region between the confinement structure and the dielectric layer; and growing a crystalline compound semiconductor material in the confinement region thereby at least partially filling the confinement region. The present invention also provides an improved compound semiconductor structure and a device for fabricating such semiconductor structure."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method for fabricating a semiconductor structure","description":"Method for fabricating a semiconductor structure. The method includes: providing a crystalline silicon substrate; defining an opening in a dielectric layer on the crystalline silicon substrate, the op","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9640394","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9640394","citation_suggestion":"Patentable. \"Method for fabricating a semiconductor structure\" (US-9640394). https://patentable.app/patents/US-9640394","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9640394","json":"https://patentable.app/api/llm-context/US-9640394","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T09:36:08.316Z"}