{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9640397","patent":{"patent_number":"US-9640397","title":"Method of fabricating a semiconductor integrated circuit using a directed self-assembly block copolymer","assignee":null,"inventors":[],"filing_date":"2014-03-14T00:00:00.000Z","publication_date":"2017-05-02T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L"],"num_claims":19,"abstract":"A method of fabricating a semiconductor integrated circuit (IC) is disclosed. A first layer is deposited over a substrate. A plurality of mandrels is formed over the first layer. Guiding-spacers are formed along sidewalls of the mandrels. Then the mandrels are removed. A neutral layer (NL) and a block copolymer (BCP) layer are deposited over the first layer and the guiding-spacers. A anneal is applied to the BCP layer to form a first polymer nanostructure between the guiding-spacers and being surrounded by a second polymer nanostructure. The first polymer nanostructures locate at a same distance from the first layer. Polymer nano-blocks are formed by selectively etching the second polymer nanostructure and the NL. By using the polymer nano-blocks and the guiding spacer as etch masks, the first layer is etched to form openings. The substrate is etched through the openings to form substrate trench and substrate fin."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method of fabricating a semiconductor integrated circuit using a directed self-assembly block copolymer","description":"A method of fabricating a semiconductor integrated circuit (IC) is disclosed. A first layer is deposited over a substrate. A plurality of mandrels is formed over the first layer. Guiding-spacers are f","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9640397","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9640397","citation_suggestion":"Patentable. \"Method of fabricating a semiconductor integrated circuit using a directed self-assembly block copolymer\" (US-9640397). https://patentable.app/patents/US-9640397","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9640397","json":"https://patentable.app/api/llm-context/US-9640397","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T18:29:12.989Z"}