{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9640403","patent":{"patent_number":"US-9640403","title":"Low electric field source erasable non-volatile memory and methods for producing same","assignee":null,"inventors":[],"filing_date":"2015-01-16T00:00:00.000Z","publication_date":"2017-05-02T00:00:00.000Z","cpc_codes":["H01L","H01L"],"num_claims":15,"abstract":"A low electric field source erasable non-volatile memory unit includes a substrate having a source diffusion region and a drain diffusion region. The source diffusion region includes a heavily-doped region and a lightly-doped region extending. A first dielectric layer and a tunnel dielectric layer are formed on the substrate. The tunnel dielectric layer includes a lower face contiguous to or partially overlapped with the lightly-doped region of the source diffusion region. A select gate and a floating gate are respectively formed on the first dielectric layer and the tunnel dielectric layer. The floating gate includes a source side edge contiguous to or partially overlapped with the lightly-doped region and misaligned from the heavily-doped region by a distance. A second dielectric layer and a control gate are formed on the floating gate. The control gate and the floating gate are insulating to each other by the second dielectric layer."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Low electric field source erasable non-volatile memory and methods for producing same","description":"A low electric field source erasable non-volatile memory unit includes a substrate having a source diffusion region and a drain diffusion region. The source diffusion region includes a heavily-doped r","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9640403","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9640403","citation_suggestion":"Patentable. \"Low electric field source erasable non-volatile memory and methods for producing same\" (US-9640403). https://patentable.app/patents/US-9640403","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9640403","json":"https://patentable.app/api/llm-context/US-9640403","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T15:31:07.628Z"}