{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9640411","patent":{"patent_number":"US-9640411","title":"Method for manufacturing a transistor device comprising a germanium channel material on a silicon based substrate, and associated transistor device","assignee":null,"inventors":[],"filing_date":"2015-11-05T00:00:00.000Z","publication_date":"2017-05-02T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L"],"num_claims":13,"abstract":"Method for manufacturing a transistor device comprising a germanium channel material on a silicon based substrate, the method comprising providing a shallow trench isolation (STI) substrate comprising a silicon protrusion embedded in STI dielectric structures, and partially recessing the silicon protrusion in order to provide a trench in between adjacent STI structures, and to provide a V-shaped groove at an upper surface of the recessed protrusion. The method also includes growing a Si1-xGex SRB layer in the trenches, and growing a germanium based channel layer on the Si1-xGex SRB layer. In this example, the Si1-xGex SRB layer comprises a germanium content x that is within the range of 20% to 99%, and the SRB layer has a thickness less than 400 nm. The present disclosure also relates to an associated transistor device."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method for manufacturing a transistor device comprising a germanium channel material on a silicon based substrate, and associated transistor device","description":"Method for manufacturing a transistor device comprising a germanium channel material on a silicon based substrate, the method comprising providing a shallow trench isolation (STI) substrate comprising","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9640411","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9640411","citation_suggestion":"Patentable. \"Method for manufacturing a transistor device comprising a germanium channel material on a silicon based substrate, and associated transistor device\" (US-9640411). https://patentable.app/patents/US-9640411","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9640411","json":"https://patentable.app/api/llm-context/US-9640411","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T10:18:37.020Z"}