{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9640427","patent":{"patent_number":"US-9640427","title":"Semiconductor structure and fabrication method thereof","assignee":null,"inventors":[],"filing_date":"2015-11-16T00:00:00.000Z","publication_date":"2017-05-02T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":20,"abstract":"A method for forming a semiconductor structure is provided. The method includes providing a substrate; and forming an ultra-low-dielectric-constant (ULK) dielectric layer on a surface of the substrate. The method also includes etching the ultra-low-dielectric-constant dielectric layer to form a trench in the ultra-low-dielectric-constant dielectric layer; and performing an inert plasma treatment process on a side surface of the trench. Further, the method includes performing a carbonization process on the side surface of the trench; and performing a nitridation process on the side surface of the trench to form a SiCNH layer on the side surface of the trench."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor structure and fabrication method thereof","description":"A method for forming a semiconductor structure is provided. The method includes providing a substrate; and forming an ultra-low-dielectric-constant (ULK) dielectric layer on a surface of the substrate","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9640427","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9640427","citation_suggestion":"Patentable. \"Semiconductor structure and fabrication method thereof\" (US-9640427). https://patentable.app/patents/US-9640427","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9640427","json":"https://patentable.app/api/llm-context/US-9640427","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T10:16:09.429Z"}