{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9640432","patent":{"patent_number":"US-9640432","title":"Memory device structure and fabricating method thereof","assignee":null,"inventors":[],"filing_date":"2016-06-13T00:00:00.000Z","publication_date":"2017-05-02T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L"],"num_claims":20,"abstract":"The disclosed subject matter provides a memory device structure and a fabricating method thereof. The memory device structure includes a substrate including a device region and a peripheral region; multiple gate structures; a first dielectric layer, a second barrier layer, multiple source interconnecting lines, and multiple drain region plugs; a second dielectric layer in the device region include multiple source line plugs, and multiple second drain region plugs, and multiple controlling gate plugs; a third dielectric layer including multiple first conductive layers; a fourth dielectric layer including multiple interconnecting structures; a fifth dielectric layer including multiple second conductive layers; and a sixth dielectric layer including multiple third conductive layers."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Memory device structure and fabricating method thereof","description":"The disclosed subject matter provides a memory device structure and a fabricating method thereof. The memory device structure includes a substrate including a device region and a peripheral region; mu","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9640432","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9640432","citation_suggestion":"Patentable. \"Memory device structure and fabricating method thereof\" (US-9640432). https://patentable.app/patents/US-9640432","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9640432","json":"https://patentable.app/api/llm-context/US-9640432","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T04:58:14.514Z"}