{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9640483","patent":{"patent_number":"US-9640483","title":"Via, trench or contact structure in the metallization, premetallization dielectric or interlevel dielectric layers of an integrated circuit","assignee":null,"inventors":[],"filing_date":"2015-05-29T00:00:00.000Z","publication_date":"2017-05-02T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":37,"abstract":"A semiconductor substrate includes a doped region. A premetallization dielectric layer extends over the semiconductor substrate. A first metallization layer is disposed on a top surface of the premetallization dielectric layer. A metal contact extends from the first metallization layer to the doped region. The premetallization dielectric layer includes sub-layers, and the first metal contact is formed by sub-contacts, each sub-contact formed in one of the sub-layers. Each first sub-contact has a width and a length, wherein the lengths of the sub-contacts forming the metal contact are all different from each other."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Via, trench or contact structure in the metallization, premetallization dielectric or interlevel dielectric layers of an integrated circuit","description":"A semiconductor substrate includes a doped region. A premetallization dielectric layer extends over the semiconductor substrate. A first metallization layer is disposed on a top surface of the premeta","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9640483","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9640483","citation_suggestion":"Patentable. \"Via, trench or contact structure in the metallization, premetallization dielectric or interlevel dielectric layers of an integrated circuit\" (US-9640483). https://patentable.app/patents/US-9640483","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9640483","json":"https://patentable.app/api/llm-context/US-9640483","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T05:19:16.466Z"}