{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9640500","patent":{"patent_number":"US-9640500","title":"Terminal structure and semiconductor device","assignee":null,"inventors":[],"filing_date":"2013-08-06T00:00:00.000Z","publication_date":"2017-05-02T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":9,"abstract":"The present invention relates to a terminal structure comprising; a base material 10; an external electrode 20 formed on the base material; an insulating coating layer 30 formed on the base material and on the electrode and having an opening exposing at least part of the electrode; an under-bump metal layer 70 filling the opening and covering part of the insulating coating layer; and a dome-shaped bump 85 covering the under-bump metal layer, wherein in a cross section along a lamination direction, the under-bump metal layer has a convex shape toward the bump, and the thickness Tu0 of the under-bump metal layer at a center of the opening is equal to or greater than the thickness Tu1 of the under-bump metal layer at an end portion of the opening."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Terminal structure and semiconductor device","description":"The present invention relates to a terminal structure comprising; a base material 10; an external electrode 20 formed on the base material; an insulating coating layer 30 formed on the base material a","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9640500","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9640500","citation_suggestion":"Patentable. \"Terminal structure and semiconductor device\" (US-9640500). https://patentable.app/patents/US-9640500","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9640500","json":"https://patentable.app/api/llm-context/US-9640500","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T05:18:58.257Z"}