{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9640540","patent":{"patent_number":"US-9640540","title":"Structure and method for an SRAM circuit","assignee":null,"inventors":[],"filing_date":"2016-07-19T00:00:00.000Z","publication_date":"2017-05-02T00:00:00.000Z","cpc_codes":["G11C","G11C","G11C"],"num_claims":20,"abstract":"An integrated circuit includes first and second SRAM cells. The first SRAM cell includes first and second pull-up devices, first and second pull-down devices configured with the first and second pull-up devices to form first and second cross-coupled inverters, first and second pass-gate devices configured with the first and second cross-coupled inverters for writing data, a read pull-down device coupled to the first inverter, and a read pass-gate device coupled to the read pull-down device. The second SRAM cell includes third and fourth pull-up devices, and third and fourth pull-down devices configured with the third and fourth pull-up devices to form third and fourth cross-coupled inverters. Work function layers of gates of the first pull-up device, first pull-down device, and third pull-up device have a first work function, a second work function, and a third work function respectively. The first, second, and third work functions are different from each other."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Structure and method for an SRAM circuit","description":"An integrated circuit includes first and second SRAM cells. The first SRAM cell includes first and second pull-up devices, first and second pull-down devices configured with the first and second pull-","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9640540","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9640540","citation_suggestion":"Patentable. \"Structure and method for an SRAM circuit\" (US-9640540). https://patentable.app/patents/US-9640540","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9640540","json":"https://patentable.app/api/llm-context/US-9640540","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T06:00:18.056Z"}