{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9640585","patent":{"patent_number":"US-9640585","title":"Method of producing a semiconductor device","assignee":null,"inventors":[],"filing_date":"2016-12-28T00:00:00.000Z","publication_date":"2017-05-02T00:00:00.000Z","cpc_codes":["H01L","H01L"],"num_claims":3,"abstract":"A semiconductor device includes four or more first memory cells arranged on a row, the first memory cells each including a first pillar-shaped semiconductor layer, a first gate insulating film formed around the first pillar-shaped semiconductor layer, a first gate line formed around the first gate insulating film, and a first magnetic tunnel junction storage element formed on the first pillar-shaped semiconductor layer. The semiconductor device further includes a first source line that connects lower portions of the first pillar-shaped semiconductor layers to each other, a first bit line that extends in a direction perpendicular to a direction in which the first gate line extends and that is connected to an upper portion of the first magnetic tunnel junction storage element, and a second source line that extends in a direction perpendicular to a direction in which the first source line extends."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method of producing a semiconductor device","description":"A semiconductor device includes four or more first memory cells arranged on a row, the first memory cells each including a first pillar-shaped semiconductor layer, a first gate insulating film formed ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9640585","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9640585","citation_suggestion":"Patentable. \"Method of producing a semiconductor device\" (US-9640585). https://patentable.app/patents/US-9640585","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9640585","json":"https://patentable.app/api/llm-context/US-9640585","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T06:09:20.347Z"}