{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9640610","patent":{"patent_number":"US-9640610","title":"Semiconductor device and method of manufacturing semiconductor device","assignee":null,"inventors":[],"filing_date":"2015-02-06T00:00:00.000Z","publication_date":"2017-05-02T00:00:00.000Z","cpc_codes":["H01L","H01L"],"num_claims":21,"abstract":"An IGBT includes an emitter electrode, base regions, an emitter region, a collector region, a collector electrode, a gate insulating film provided in contact with the silicon carbide semiconductor region, the emitter region, and the base region, and a gate electrode that faces the gate insulating film. A FWD includes a base contact region provided adjacent to the emitter region and electrically connected to the emitter electrode, and a cathode region disposed in the upper layer part on the other main surface side of the silicon carbide semiconductor region, provided adjacent to the collector region, and electrically connected to the collector electrode. The IGBT further includes a reduced carrier-trap region disposed in a principal current-carrying region of the silicon carbide semiconductor region located above the collector region and having a smaller number of carrier traps than the silicon carbide semiconductor region located above the cathode region."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor device and method of manufacturing semiconductor device","description":"An IGBT includes an emitter electrode, base regions, an emitter region, a collector region, a collector electrode, a gate insulating film provided in contact with the silicon carbide semiconductor reg","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9640610","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9640610","citation_suggestion":"Patentable. \"Semiconductor device and method of manufacturing semiconductor device\" (US-9640610). https://patentable.app/patents/US-9640610","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9640610","json":"https://patentable.app/api/llm-context/US-9640610","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T17:27:42.468Z"}