{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9640613","patent":{"patent_number":"US-9640613","title":"Semiconductor device and manufacturing method thereof","assignee":null,"inventors":[],"filing_date":"2016-07-23T00:00:00.000Z","publication_date":"2017-05-02T00:00:00.000Z","cpc_codes":["H01L","H01L"],"num_claims":9,"abstract":"Improvements are achieved in the performance and reliability of a semiconductor device. In a trench in an n-type semiconductor substrate, a gate electrode for a trench-gate field effect transistor is formed via a gate insulating film. A p-type semiconductor region for channel formation is formed so as to be adjacent to the trench. Over the p-type semiconductor region, a source n+-type semiconductor region is formed so as to be adjacent to the trench. In the semiconductor substrate, a first p-type column is formed under the p-type semiconductor region. Under the first p-type column, a second p-type column is formed. The first p-type column is internally included in the second p-type column in plan view. The two-dimensional size of the second p-type column is larger than the two-dimensional size of the first p-type column."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor device and manufacturing method thereof","description":"Improvements are achieved in the performance and reliability of a semiconductor device. In a trench in an n-type semiconductor substrate, a gate electrode for a trench-gate field effect transistor is ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9640613","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9640613","citation_suggestion":"Patentable. \"Semiconductor device and manufacturing method thereof\" (US-9640613). https://patentable.app/patents/US-9640613","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9640613","json":"https://patentable.app/api/llm-context/US-9640613","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T17:28:17.462Z"}