{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9640618","patent":{"patent_number":"US-9640618","title":"Silicon carbide semiconductor device, method of manufacturing silicon carbide semiconductor device and method of designing silicon carbide semiconductor device","assignee":null,"inventors":[],"filing_date":"2014-09-24T00:00:00.000Z","publication_date":"2017-05-02T00:00:00.000Z","cpc_codes":["G06F","H01L","H01L","H01L"],"num_claims":7,"abstract":"A silicon carbide semiconductor device includes a silicon carbide layer 32 of a first conductivity type, a silicon carbide layer 36 of a second conductivity type, a gate trench 20, a gate electrode 79 provided in the gate trench 20, and a protection trench 10 formed to a greater depth than the gate trench 20. A region in the horizontal direction that includes both the gate trench 20 and a protection trench 10 that surrounds only a part of the gate trench 20 in the horizontal direction is a cell region, and a region in the horizontal direction that includes a protection trench 10 and in which a gate pad 89 or a lead electrode connected to the gate pad 89 is disposed is a gate region."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Silicon carbide semiconductor device, method of manufacturing silicon carbide semiconductor device and method of designing silicon carbide semiconductor device","description":"A silicon carbide semiconductor device includes a silicon carbide layer 32 of a first conductivity type, a silicon carbide layer 36 of a second conductivity type, a gate trench 20, a gate electrode 79","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9640618","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9640618","citation_suggestion":"Patentable. \"Silicon carbide semiconductor device, method of manufacturing silicon carbide semiconductor device and method of designing silicon carbide semiconductor device\" (US-9640618). https://patentable.app/patents/US-9640618","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9640618","json":"https://patentable.app/api/llm-context/US-9640618","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T14:25:14.597Z"}