{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9640620","patent":{"patent_number":"US-9640620","title":"High power transistor with oxide gate barriers","assignee":null,"inventors":[],"filing_date":"2014-11-03T00:00:00.000Z","publication_date":"2017-05-02T00:00:00.000Z","cpc_codes":["H01L","H01L"],"num_claims":7,"abstract":"A method of fabricating a gate stack for a power transistor device includes thermally oxidizing a surface of a Group IIIA-N layer on a substrate to form a first dielectric layer of an oxide material that is >5A thick. A second dielectric layer being silicon nitride or silicon oxynitride is deposited on the first dielectric layer. A metal gate electrode is formed on the second dielectric layer."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"High power transistor with oxide gate barriers","description":"A method of fabricating a gate stack for a power transistor device includes thermally oxidizing a surface of a Group IIIA-N layer on a substrate to form a first dielectric layer of an oxide material t","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9640620","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9640620","citation_suggestion":"Patentable. \"High power transistor with oxide gate barriers\" (US-9640620). https://patentable.app/patents/US-9640620","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9640620","json":"https://patentable.app/api/llm-context/US-9640620","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T07:27:31.475Z"}