{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9640629","patent":{"patent_number":"US-9640629","title":"Semiconductor device and method of manufacturing the same","assignee":null,"inventors":[],"filing_date":"2016-08-31T00:00:00.000Z","publication_date":"2017-05-02T00:00:00.000Z","cpc_codes":["H01L","H01L"],"num_claims":20,"abstract":"According to one embodiment, a semiconductor device includes a substrate and a gate electrode. The gate electrode includes a first electrode formed on the substrate, the first electrode having a first conductive property, with a first insulating film between the first electrode and the substrate, and a second electrode formed on the substrate, the second electrode having a second conductive property different from the first conductive property, with a second insulating film between the second electrode and the substrate. The first electrode is formed in a rectangular shape having a hollow portion. A slit is formed in a side surface of the first electrode extending in a width direction of the gate electrode. The second electrode is formed in the slit and along the side surface of the first electrode that has the slit."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor device and method of manufacturing the same","description":"According to one embodiment, a semiconductor device includes a substrate and a gate electrode. The gate electrode includes a first electrode formed on the substrate, the first electrode having a first","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9640629","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9640629","citation_suggestion":"Patentable. \"Semiconductor device and method of manufacturing the same\" (US-9640629). https://patentable.app/patents/US-9640629","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9640629","json":"https://patentable.app/api/llm-context/US-9640629","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T07:20:46.636Z"}