{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9640663","patent":{"patent_number":"US-9640663","title":"High-voltage FinFET device having LDMOS structure and method for manufacturing the same","assignee":null,"inventors":[],"filing_date":"2014-12-29T00:00:00.000Z","publication_date":"2017-05-02T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L"],"num_claims":10,"abstract":"A high-voltage FinFET device having LDMOS structure and a method for manufacturing the same are provided. The high-voltage FinFET device includes: at least one fin structure, a working gate, a shallow trench isolation structure, and a first dummy gate. The fin structure includes a first-type well region and a second-type well region adjacent to the first-type well region, and further includes a first part and a second part. A trench is disposed between the first part and the second part and disposed in the first-type well region. A drain doped layer is disposed on the first part which is disposed in the first-type well region, and a source doped layer is disposed on the second part which is disposed in the second-type well region. The working gate is disposed on the fin structure which is disposed in the first-type well region and in the second-type well region."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"High-voltage FinFET device having LDMOS structure and method for manufacturing the same","description":"A high-voltage FinFET device having LDMOS structure and a method for manufacturing the same are provided. The high-voltage FinFET device includes: at least one fin structure, a working gate, a shallow","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9640663","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9640663","citation_suggestion":"Patentable. \"High-voltage FinFET device having LDMOS structure and method for manufacturing the same\" (US-9640663). https://patentable.app/patents/US-9640663","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9640663","json":"https://patentable.app/api/llm-context/US-9640663","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T09:18:17.670Z"}