{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9646669","patent":{"patent_number":"US-9646669","title":"Programming memory elements using two phase boost","assignee":null,"inventors":[],"filing_date":"2015-10-15T00:00:00.000Z","publication_date":"2017-05-09T00:00:00.000Z","cpc_codes":["G11C","G11C"],"num_claims":20,"abstract":"Memory devices, such as MRAM devices, are described that comprise memory elements for storing data and configuration logic for programming memory elements using a two phase boost. The memory devices perform the two phase boosting to program anti-parallel data values during a first programming phase and to program parallel data values during a second programming phase that is subsequent to the first programming phase. The voltage boost is provided by a high percentage of memory elements in a memory device by simultaneously transitioning the source line of the memory elements from a reference voltage to a source voltage during the first programming phase to effectively double the activation voltage for gates of transistors in the memory elements to program anti-parallel data values. Methods are also described for programming memory elements using a two phase boost."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Programming memory elements using two phase boost","description":"Memory devices, such as MRAM devices, are described that comprise memory elements for storing data and configuration logic for programming memory elements using a two phase boost. The memory devices p","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9646669","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9646669","citation_suggestion":"Patentable. \"Programming memory elements using two phase boost\" (US-9646669). https://patentable.app/patents/US-9646669","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9646669","json":"https://patentable.app/api/llm-context/US-9646669","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T10:20:48.188Z"}