{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9646830","patent":{"patent_number":"US-9646830","title":"Semiconductor structure and fabrication method thereof","assignee":null,"inventors":[],"filing_date":"2015-04-20T00:00:00.000Z","publication_date":"2017-05-09T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":19,"abstract":"According to a semiconductor structure fabrication method, a semiconductor substrate having gate structures is provided. Sidewalls of the gate structures may be covered by a spacer layer. An epitaxy process is performed to form a semiconductor epitaxial material layer covering the gate structures, the spacer layer, and the semiconductor substrate. Then, an etching process is performed to form a first semiconductor epitaxial layer on the semiconductor substrate at the two sides of the gate structures. Further, a selective epitaxy process is performed by using a deposition gas and an etching gas, forming a second semiconductor epitaxial layer. The formed second semiconductor epitaxial layer may repair or compensate the first semiconductor epitaxial layer along the horizontal direction. The epitaxy process, the etching process, and the selective epitaxy process are repeated successively to form elevated source/drain regions. The formed elevated source/drain regions may have a flat top surface without any angles."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor structure and fabrication method thereof","description":"According to a semiconductor structure fabrication method, a semiconductor substrate having gate structures is provided. Sidewalls of the gate structures may be covered by a spacer layer. An epitaxy p","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9646830","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9646830","citation_suggestion":"Patentable. \"Semiconductor structure and fabrication method thereof\" (US-9646830). https://patentable.app/patents/US-9646830","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9646830","json":"https://patentable.app/api/llm-context/US-9646830","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T07:13:57.631Z"}