{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9646845","patent":{"patent_number":"US-9646845","title":"Method of forming a mask for substrate patterning","assignee":null,"inventors":[],"filing_date":"2015-12-17T00:00:00.000Z","publication_date":"2017-05-09T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":18,"abstract":"Techniques herein include using acid-diffusion—controllable to specific diffusion lengths—to create sacrificial structures that, when removed, define a critical dimension (CD) of various features and contact openings. Removing such sacrificial structures defines a trench of a precisely controllable width. The surrounding material is then neutralized from additional solubility shifts using a ballistic electron treatment, thereby creating a first mask layer. A second mask layer formed on top of the first mask layer can be lithographically exposed and developed. The combined mask layers define a pattern for transfer into an underlying target layer. Accordingly, techniques disclosed herein enable patterning of features and contact openings having widths in a range from less than about 1 nanometer and up to around 50 nanometers or more. Techniques herein can also enable use of high-speed EUV (extreme ultraviolet) patterning."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method of forming a mask for substrate patterning","description":"Techniques herein include using acid-diffusion—controllable to specific diffusion lengths—to create sacrificial structures that, when removed, define a critical dimension (CD) of various features and ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9646845","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9646845","citation_suggestion":"Patentable. \"Method of forming a mask for substrate patterning\" (US-9646845). https://patentable.app/patents/US-9646845","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9646845","json":"https://patentable.app/api/llm-context/US-9646845","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T19:50:19.149Z"}