{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9646849","patent":{"patent_number":"US-9646849","title":"Semiconductor device with nano-gaps and method for manufacturing the same","assignee":null,"inventors":[],"filing_date":"2015-03-25T00:00:00.000Z","publication_date":"2017-05-09T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":20,"abstract":"A semiconductor device and a method for manufacturing the same are provided. A semiconductor device includes a substrate, a first capping layer formed above the substrate, a first dielectric layer formed on the first capping layer; a second capping layer formed on the first dielectric layer; a second dielectric layer formed on the second capping layer; a plurality of conducting lines separately formed on the substrate; a third capping layer formed on the conducting lines and the second dielectric layer; and several nano-gaps formed between the adjacent conducting lines, and the nano-gaps being formed in the second dielectric layer, or further extending to the second capping layer or to the first capping layer. The nano-gaps partially open one of the second and first dielectric layers, or the nano-gaps expose the first capping layer or the second capping layer."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor device with nano-gaps and method for manufacturing the same","description":"A semiconductor device and a method for manufacturing the same are provided. A semiconductor device includes a substrate, a first capping layer formed above the substrate, a first dielectric layer for","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9646849","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9646849","citation_suggestion":"Patentable. \"Semiconductor device with nano-gaps and method for manufacturing the same\" (US-9646849). https://patentable.app/patents/US-9646849","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9646849","json":"https://patentable.app/api/llm-context/US-9646849","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T07:22:51.194Z"}