{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9646884","patent":{"patent_number":"US-9646884","title":"Block level patterning process","assignee":null,"inventors":[],"filing_date":"2015-04-29T00:00:00.000Z","publication_date":"2017-05-09T00:00:00.000Z","cpc_codes":["H01L","H01L"],"num_claims":20,"abstract":"The present application relates to an optical planarizing layer etch process. Embodiments include forming fins separated by a dielectric layer; forming a recess in the dielectric layer on each side of each fin, each recess being for a metal gate; forming sidewall spacers on each side of each recess; depositing a high-k dielectric liner in each recess and on a top surface of each of the fins; depositing a metal liner over the high-k dielectric layer; depositing a non-conformal organic layer (NCOL) over a top surface of the dielectric layer to pinch-off a top of each recess; depositing an OPL and ARC over the NCOL; etching the OPL, ARC and NCOL over a portion of the dielectric layer and recesses in a first region; and etching the portion of the recesses to remove residual NCOL present at a bottom of each recess of the portion of the recesses."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Block level patterning process","description":"The present application relates to an optical planarizing layer etch process. Embodiments include forming fins separated by a dielectric layer; forming a recess in the dielectric layer on each side of","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9646884","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9646884","citation_suggestion":"Patentable. \"Block level patterning process\" (US-9646884). https://patentable.app/patents/US-9646884","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9646884","json":"https://patentable.app/api/llm-context/US-9646884","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T12:21:03.691Z"}