{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9646885","patent":{"patent_number":"US-9646885","title":"Method to prevent lateral epitaxial growth in semiconductor devices by performing plasma nitridation process on Fin ends","assignee":null,"inventors":[],"filing_date":"2016-07-29T00:00:00.000Z","publication_date":"2017-05-09T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":4,"abstract":"A method for preventing epitaxial growth in a semiconductor device is described. The method cuts the fins of a FinFET structure to form a set of exposed fin ends. A plasma nitridation process is performed to the set of exposed fin ends. The plasma nitridation process forms a set of nitride layer covered fin ends. Dielectric material is deposited over the FinFET structure. The dielectric is etched to reveal sidewalls of the fins and the set of nitride layer covered fin ends. The nitride layer prevents epitaxial growth at the set of spacer covered fin ends."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method to prevent lateral epitaxial growth in semiconductor devices by performing plasma nitridation process on Fin ends","description":"A method for preventing epitaxial growth in a semiconductor device is described. The method cuts the fins of a FinFET structure to form a set of exposed fin ends. A plasma nitridation process is perfo","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9646885","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9646885","citation_suggestion":"Patentable. \"Method to prevent lateral epitaxial growth in semiconductor devices by performing plasma nitridation process on Fin ends\" (US-9646885). https://patentable.app/patents/US-9646885","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9646885","json":"https://patentable.app/api/llm-context/US-9646885","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T05:02:52.564Z"}