{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9646886","patent":{"patent_number":"US-9646886","title":"Tailored silicon layers for transistor multi-gate control","assignee":null,"inventors":[],"filing_date":"2015-12-30T00:00:00.000Z","publication_date":"2017-05-09T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":11,"abstract":"Disclosed is a process of making field-effect transistor gate stacks containing different deposited thin film silicon material layers having different hydrogen content, and devices comprising these gate stacks. The threshold voltage (Vt) can be tuned by tailoring the hydrogen content of the thin film silicon material layer positioned below a core dielectric and directly on a semiconductor material substrate."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Tailored silicon layers for transistor multi-gate control","description":"Disclosed is a process of making field-effect transistor gate stacks containing different deposited thin film silicon material layers having different hydrogen content, and devices comprising these ga","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9646886","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9646886","citation_suggestion":"Patentable. \"Tailored silicon layers for transistor multi-gate control\" (US-9646886). https://patentable.app/patents/US-9646886","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9646886","json":"https://patentable.app/api/llm-context/US-9646886","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T05:41:35.113Z"}