{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9646928","patent":{"patent_number":"US-9646928","title":"Semiconductor arrangement and formation thereof","assignee":null,"inventors":[],"filing_date":"2014-03-13T00:00:00.000Z","publication_date":"2017-05-09T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":20,"abstract":"A semiconductor arrangement and method of formation are provided. The semiconductor arrangement includes a metal trace under at least a first dielectric layer and a second dielectric layer. The metal trace is connected to a ball connection by a first via in the first dielectric layer and second via in the second dielectric layer. The metal trace is connected to a test pad at a connection point, where the connection point is under the first dielectric layer. The metal trace under at least the first dielectric layer and the second dielectric layer has increased stability and decreased susceptibility to cracking in least one of the ball connection, the connection point, the first via or the second via as compared to a metal trace that is not under at least a first dielectric layer and a second dielectric layer."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor arrangement and formation thereof","description":"A semiconductor arrangement and method of formation are provided. The semiconductor arrangement includes a metal trace under at least a first dielectric layer and a second dielectric layer. The metal ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9646928","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9646928","citation_suggestion":"Patentable. \"Semiconductor arrangement and formation thereof\" (US-9646928). https://patentable.app/patents/US-9646928","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9646928","json":"https://patentable.app/api/llm-context/US-9646928","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T19:28:43.751Z"}