{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9646966","patent":{"patent_number":"US-9646966","title":"N-channel and P-channel end-to-end finFET cell architecture","assignee":null,"inventors":[],"filing_date":"2014-10-28T00:00:00.000Z","publication_date":"2017-05-09T00:00:00.000Z","cpc_codes":["G06F","G06F"],"num_claims":14,"abstract":"A finFET block architecture uses end-to-end finFET blocks. A first set of semiconductor fins having a first conductivity type and a second set of semiconductor fins having a second conductivity type can be aligned end-to-end. An inter-block isolation structure separates the semiconductor fins in the first and second sets. The ends of the fins in the first set are proximal to a first side of the inter-block isolation structure and ends of the fins in the second set are proximal to a second side of the inter-block isolation structure. A patterned gate conductor layer includes a first gate conductor extending across at least one fin in the first set of semiconductor fins, and a second gate conductor extending across at least one fin in the second set of semiconductor fins. The first and second gate conductors are connected by an inter-block conductor."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"N-channel and P-channel end-to-end finFET cell architecture","description":"A finFET block architecture uses end-to-end finFET blocks. A first set of semiconductor fins having a first conductivity type and a second set of semiconductor fins having a second conductivity type c","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9646966","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9646966","citation_suggestion":"Patentable. \"N-channel and P-channel end-to-end finFET cell architecture\" (US-9646966). https://patentable.app/patents/US-9646966","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9646966","json":"https://patentable.app/api/llm-context/US-9646966","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T17:27:51.609Z"}